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Prof. Dr. SEYDİ DOĞAN

Yayınlar & Eserler

SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler 63

Neural network estimations of annealed and non-annealed Schottky diode characteristics at wide temperatures range

Materials Science in Semiconductor Processing, Cilt: 149, 2022 (SCI-Expanded)

Thermal sensitivity and barrier height inhomogeneity in thermally annealed and un-annealed Ni/n-6H-SiC Schottky diodes

Sensors and Actuators A: Physical, Cilt: 338, 2022 (SCI-Expanded)

Mobile system: Detecting buried objects by magnetic anomaly method

Journal of Applied Remote Sensing, Cilt: 15, 2021 (SCI-Expanded)

Development of a photovoltaic panel emulator and LabVIEW-based application platform

Computer Applications in Engineering Education, Cilt: 28, 2020 (SCI-Expanded)

Detection and imaging of underground objects for distinguishing explosives by using a fluxgate sensor array

Applied Sciences, Cilt: 9, Sayı: 24, 2019 (SCI-Expanded)

Design of a multi-channel quartz crystal microbalance data acquisition system

Measurement Science and Technology, Cilt: 29, Sayı: 7, 2018 (SCI-Expanded)

Lutentium incorporation influence on ZnO thin films coated via a sol–gel route: spin coating technique

Journal of Materials Science: Materials in Electronics, Cilt: 27, Sayı: 5, 2016 (SCI-Expanded)

Optical and structural properties of bismuth doped ZnO thin films by sol-gel method. Urbach rule as a function of crystal defects

Acta Physica Polonica A, Cilt: 126, Sayı: 3, 2014 (SCI-Expanded)

Fabrication and characterization of Al/Cu2ZnSnS 4/n-Si/Al heterojunction photodiodes

physica status solidi (a), Cilt: 211, Sayı: 3, 2014 (SCI-Expanded)

Characteristic evaluation on spray-deposited WFTO thin films as a function of W doping ratio

Rare Metals, Cilt: 33, Sayı: 4, 2014 (SCI-Expanded)

Structural characterizations and optical properties of InSe and InSe:Ag semiconductors grown by Bridgman/Stockbarger technique

Physica E: Low-dimensional Systems and Nanostructures, Cilt: 64, 2014 (SCI-Expanded)

W doped SnO2 growth via sol-gel routes and characterization: Nanocubes

Optik - International Journal for Light and Electron Optics, Cilt: 124, Sayı: 21, 2013 (SCI-Expanded)

Effect of Nb doping on structural, electrical and optical properties of spray deposited SnO2 thin films

Superlattices and Microstructures, Cilt: 56, Sayı: 1, 2013 (SCI-Expanded)

An investigation of the Nb doping effect on structural, morphological, electrical and optical properties of spray deposited F doped SnO2 films

Physica Scripta, Cilt: 87, Sayı: 3, 2013 (SCI-Expanded)

Growth and characterization of Ag/n-ZnO/p-Si/Al heterojunction diode by sol-gel spin technique

Journal of Alloys and Compounds, Cilt: 550, Sayı: 15, 2013 (SCI-Expanded)

The effect of fluorine and tungsten co-doping on optical, electrical and structural properties of tin (IV) oxide thin films prepared by sol–gel spin coating method

Optica Applicata, Sayı: 4, 2013 (Hakemli Dergi)

A study on characterization of Al/ZnS/p-Si/Al heterojunction diode synthesized by sol-gel technique

Materials Letters, Cilt: 102103, Sayı: 1, 2013 (SCI-Expanded)

Metal p InSe Mn Schottky Barrier Diodes

Journal of Optoelectronics and Advanced Materials, Cilt: 14, Sayı: 7, 2012 (Hakemli Dergi)

Investigation of structural and optical properties of ZnO films co-doped with fluorine and indium

Superlattices and Microstructures, Cilt: 52, Sayı: 1, 2012 (SCI-Expanded)

Evaluation of structural and optical properties of Mn-doped ZnO thin films synthesized by sol-gel technique

Metallurgical and Materials Transactions A, Cilt: 43, Sayı: 13, 2012 (SCI-Expanded)

Capacitance and conductance-frequency characteristics of Au-Sb/p-GaSe:Gd Schottky barrier diode

Vacuum, Cilt: 85, Sayı: 8, 2011 (SCI-Expanded)

Structural and optical properties of ZnO thin films by the spin coating Sol-Gel method

Journal of Sol-Gel Science and Technology, Cilt: 60, Sayı: 1, 2011 (SCI-Expanded)

Electrical characterization of Ag/p-GaSe:Gd schottky barrier diodes

Physica E: Low-dimensional Systems and Nanostructures, Cilt: 42, Sayı: 7, 2010 (SCI-Expanded)

InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates

Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures, Cilt: 28, Sayı: 5, 2010 (SCI-Expanded)

Temperature dependent capacitance and DLTS studies of Ni/n-type 6H-SiC Schottky diode

Current Applied Physics, Cilt: 9, Sayı: 6, 2009 (SCI-Expanded)

Temperature-dependent electrical characterization of nitrogen-doped ZnO thin film: Vacuum annealing effect

Physica Scripta, Cilt: 79, Sayı: 3, 2009 (SCI-Expanded)

Temperature variation of current-voltage characteristics of Au/Ni/n-GaN Schottky diodes

Physica E: Low-dimensional Systems and Nanostructures, Cilt: 41, Sayı: 4, 2009 (SCI-Expanded)

Electrical characteristics and inhomogeneous barrier analysis of Au-Be/p-InSe:Cd Schottky barrier diodes

Microelectronic Engineering, Cilt: 86, Sayı: 1, 2009 (SCI-Expanded)

Determination of the transport mechanisms in mixed conduction of reactively sputtered ZnO thin films

Journal of Physics D: Applied Physics, Cilt: 41, Sayı: 13, 2008 (SCI-Expanded)

The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes

Applied Physics A, Cilt: 91, Sayı: 2, 2008 (SCI-Expanded)

The effects of the temperature and annealing on current-voltage characteristics of Ni/n-type 6H-SiC Schottky diode

Microelectronic Engineering, Cilt: 85, Sayı: 3, 2008 (SCI-Expanded)

Urbach tail and electric field influence on optical properties of InSe and InSe:Er single crystals

Applied Physics A, Cilt: 90, Sayı: 3, 2008 (SCI-Expanded)

Direct recognition of non-radiative recombination centers in semi-insulating LEC InP:Fe using double excitation photoluminescence

Journal of Luminescence, Cilt: 128, Sayı: 2, 2008 (SCI-Expanded)

Observation of surface charging at the edge of a Schottky contact

IEEE Electron Device Letters, Cilt: 27, Sayı: 4, 2006 (SCI-Expanded)

Deep levels in KOH etched and MOCVD regrown GaN p-n junctions

physica status solidi (c), Cilt: 2, Sayı: 7, 2005 (SCI-Expanded)

Characterization of MOCVD grown GaN on porous SiC templates

physica status solidi (c), Cilt: 2, Sayı: 7, 2005 (SCI-Expanded)

High efficiency n-ZnO/p-SiC heterostructure photodiodes grown by plasma-assisted molecular-beam epitaxy

Superlattices and Microstructures, Cilt: 38, 2005 (SCI-Expanded)

Forward-current electroluminescence from GaN/ZnO double heterostructure diode

Solid-State Electronics, Cilt: 49, Sayı: 10, 2005 (SCI-Expanded)

A comprehensive review of ZnO materials and devices

Journal of Applied Physics, Cilt: 98, Sayı: 4, 2005 (SCI-Expanded)

Comparison of deep levels in GaN grown by MBE, MOCVD, and HVPE

SPIE, Cilt: 5739, Sayı: 1, 2005 (SCI-Expanded)

Effect of n +-GaN subcontact layer on 4H-SiC high-power photoconductive switch

Applied Physics Letters, Cilt: 86, Sayı: 26, 2005 (SCI-Expanded)

A study of GaN regrowth on the micro-facetted GaN template formed by in-situ thermal etching

physica status solidi (a), Cilt: 202, Sayı: 5, 2005 (SCI-Expanded)

Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates

physica status solidi (a), Cilt: 202, Sayı: 5, 2005 (SCI-Expanded)

Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy

Applied Physics Letters, Cilt: 86, Sayı: 4, 2005 (SCI-Expanded)

Surface charging and current collapse in an AlGaNGaN heterostructure field effect transistor

Applied Physics Letters, Cilt: 86, Sayı: 8, 2005 (SCI-Expanded)

Photoresponse of <i>n</i>-ZnO/<i>p</i>-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy - art. no. 241108

Applied Physics Letters, Cilt: 86, Sayı: 24, 2005 (SCI-Expanded)

Thermal stability of electron traps in GaN grown by metalorganic chemical vapor deposition

Applied Physics Letters, Cilt: 85, Sayı: 18, 2004 (SCI-Expanded)

Excitonic fine structure and recombination dynamics in single-crystalline ZnO

Physical Review B, Cilt: 70, Sayı: 19, 2004 (SCI-Expanded)

Determination of the carrier concentration in InGaAsNGaAs single quantum wells using Raman scattering

Applied Physics Letters, Cilt: 85, Sayı: 21, 2004 (SCI-Expanded)

The effect of hydrogen etching on 6H-SiC studied by temperature-dependent current-voltage and atomic force microscopy

Applied Physics Letters, Cilt: 85, Sayı: 9, 2004 (SCI-Expanded)

Investigation of forward and reverse current conduction in GaN films by conductive atomic force microscopy

Applied Physics Letters, Cilt: 84, Sayı: 21, 2004 (SCI-Expanded)

Surface band bending in as-grown and plasma-treated n-type GaN films using surface potential electric force microscopy

Applied Physics Letters, Cilt: 84, Sayı: 16, 2004 (SCI-Expanded)

Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN

Applied Physics Letters, Cilt: 84, Sayı: 12, 2004 (SCI-Expanded)

GaN AlGaN back illuminated multiple quantum well Schottky barrier ultraviolet photodetectors

Solid-State Electronics, Cilt: 47, Sayı: 8, 2003 (Hakemli Dergi)

Improvement of n-GaN schottky diode rectifying characteristics using KOH etching

Applied Physics Letters, Cilt: 82, Sayı: 20, 2003 (SCI-Expanded)

4H-SiC photoconductive switching devices for use in high-power applications

Applied Physics Letters, Cilt: 82, Sayı: 18, 2003 (SCI-Expanded)

Electric field influence on absorption measurement in InSe single crystal

Physica E: Low-dimensional Systems and Nanostructures, Cilt: 16, Sayı: 2, 2003 (Hakemli Dergi)

Convertibility of conductivity type in reactively sputtered ZnO thin films

physica status solidi (a), Cilt: 195, Sayı: 1, 2003 (SCI-Expanded)

p-GaN-i-GaN/AlGaN multiple-quantum well n-AlGaN back-illuminated ultraviolet detectors

Journal of Electronic Materials, Cilt: 32, Sayı: 5, 2003 (SCI-Expanded)

Temperature Dependence of Magnetoresistance and Hall Effect for Ho Doped n-Type InSe

Physica Scripta, Cilt: 62, Sayı: 1, 2000 (SCI-Expanded)

Anomalous Behaviour of Galvanomagnetic Effect in Very Lightly n Type Bulk GaAs Possible Role of Reverse Contrast Centres

Physica Status Solidi (a), Cilt: 174, Sayı: 1, 1999 (Hakemli Dergi)

In situ optical assessment of semi-insulating iron doped InP grown by liquid encapsulated Czochralski process

Journal of Applied Physics, Cilt: 85, Sayı: 9, 1999 (Scopus)

Growth and Temperature Dependence of Optical Properties of Er Doped and Undoped n-Type InSe

Japanese Journal of Applied Physics, Cilt: 38, 1999 (SCI-Expanded)